Spectral dependence of main parameters of ITE silicon avalanche photodiodes

摘要

New applications for avalanche photodiedes (APDs), as in systems using visible radiation, have prompted the need for the evaluation of detection properties of ITE APDs in the 400÷700 nm spectral range. The paper presents the method and results of studies on the spectral dependence of the gain, dark and noise currents, sensitivity and excess noise factor of ITE APDs. The studies have shown that ITE APDs optimised for the near infrared radiation (800 ÷ 850 nm) can be effectively applied in the detection of radiation above the 500 nm wavelength.