Polarisation dependence of two-photon absorption generated by band-limited amplified spontaneous emission noise in silicon avalanche photodiodes

ODowd J.A.; Guo W.H.; Flood E.; Lynch M.; Bradley A.L.; Kilper D.C.; Donegan J.F.

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Polarisation dependence of two-photon absorption generated by band-limited amplified spontaneous emission noise in silicon avalanche photodiodes

机译：带限放大的自发发射噪声在硅雪崩光电二极管中产生的两光子吸收的偏振相关性

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摘要

Two-photon absorption (TPA) generated by unpolarised band-limited amplified spontaneous emission (BL-ASE) noise is found to be within 5% of that generated by circularly polarised BL-ASE noise for silicon-based devices. A simple formula that describes the TPA generated by partially polarised BL-ASE noise as a function of material dichroism is given and verified experimentally.

机译：对于基于硅的器件，发现由非偏振带限放大的自发发射（BL-ASE）噪声产生的双光子吸收（TPA）在圆偏振BL-ASE噪声产生的双光子吸收的5％范围内。给出并描述了一个简单的公式，该公式描述了部分极化的BL-ASE噪声所产生的TPA与材料二色性的关系。

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《Electronics Letters》 |2011年第25期|p.1390-1391|共2页
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ODowd J.A.; Guo W.H.; Flood E.; Lynch M.; Bradley A.L.; Kilper D.C.; Donegan J.F.;
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CTVR, Semiconductor Photonics Group, School of Physics, Trinity College Dublin, Ireland. Intune Networks, Park West Business Park, Dublin, Ireland;

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1. Description of polarisation dependence of two-photon absorption in silicon avalanche photodiodes [J] . J. ODowd, W.H. Guo, M. Lynch, Electronicsletters . 2010,第12期

机译：硅雪崩光电二极管中双光子吸收的偏振依赖性描述
2. Description of polarisation dependence of two-photon absorption in silicon avalanche photodiodes [J] . ODowd J., Guo W.H., Lynch M., Electronics Letters . 2010,第12期

机译：硅雪崩光电二极管中双光子吸收的偏振依赖性描述
3. Passive Geiger Mode Operation of a Si Two-Photon Absorption Avalanche Photodiode and Its Temperature Dependence [J] . Toshiaki KAGAWA, Suguru ARAI IEICE Transactions on Electronics . 2003,第9期

机译：Si两光子吸收雪崩光电二极管的被动Geiger模式操作及其温度依赖性
4. MULTIPLICATION NOISE SIMULATION OF AMORPHOUS SILICON/SILICON-CARBIDE SEPARATED ABSORPTION AND MULTIPLICATION REGION WITH ADDITIONAL P-N-ASIC:H/I-A-SI:H/I-A-SIC:H AVALANCHE UNIT AVALANCHE PHOTODIODE [C] . Huei-Ching Huang, Neng-Fu Shih, Chung-Yuan Kung International Conference on Semiconductor Technology . 2006

机译：非晶硅/碳化硅分离吸收和倍增区域的乘法噪声仿真用另外的P-N形：H / I-A-Si：H / I-A-SiC：H Avalanche单位雪崩光电二极管
5. Statistical properties of filtered amplified spontaneous emission noise of erbium-doped fiber amplifiers. [D] . Foo, Sik Heng. 1999

机译：掺fiber光纤放大器的放大后的自发发射噪声的统计特性。
6. Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes [O] . P. Y. Zhou, X. M. Dou, X. F. Wu, -1

机译：使用硅雪崩光电二极管从InAs / GaAs量子点发射1.3μm的单光子特性
7. Polarisation dependence of two-photon absorption generated by band-limited amplified spontaneous emission noise in silicon avalanche photodiodes [O] . J.A. ODowd, D.C. Kilper, M. Lynch, 2011

机译：硅雪崩光电二极管中带限量放大的自发发射噪声产生的双光子吸收的偏振依赖性

Polarisation dependence of two-photon absorption generated by band-limited amplified spontaneous emission noise in silicon avalanche photodiodes

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