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Embedded thin film resistors, capacitors and inductors in flexible polyimide films

机译:嵌入式薄膜电阻器,电容器和电感器在柔性聚酰亚胺膜中

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The High Density Electronics Center (HiDEC) at the University of Arkansas is working with the Sheldahl MCM-L Consortium and Rensselaer Polytechnic Institute (RPI) to develop low-cost embedded resistors, capacitors, and inductors in flexible polyimide films under an ARPA contract. Embedding thin-film passive devices into polyimide layers as part of a Multichip Module (MCM) system is new. The design concept allows fabrication and testing of embedded passive devices before assembling them into an MCM-L substrate. Embedded passive devices are needed as an enhancement to present day MCM-L and MCM-D technologies. The ability to remove devices such as terminating resistors and decoupling capacitors from the surfaces of PCB boards and MCMs into a flexible film, at low cost, would be a break-through for MCM technology. The devices are made into a flexible MCM package using a 2 layer interconnect system called the Interconnected Mesh Power System (IMPS) developed and patented at the University of Arkansas. The IMPS interconnection topology incorporates fine line lithography and batch via generation to allow planar power and ground distribution, and dense signal interconnection, on only two metal layers. The materials being used are NiCr, TaN, and CrSi for the resistors and Ta/sub x/O/sub y/ and BaTiO/sub x/ for the capacitors. Contacts, interconnecting signal lines, and power lines are made with Cu metallurgy. The devices are made on a 25 /spl mu/m or 50 /spl mu/m thick polyimide film and are encapsulated with the same polyimide.
机译:Arkansas大学的高密度电子中心(Hidec)正在与Sheldahl MCM-L联盟和Renselaer Polytechnich(RPI)合作,在ARPA合同下开发柔性聚酰亚胺膜中的低成本嵌入式电阻器,电容器和电感器。将薄膜无源器件嵌入到聚酰亚胺层中,作为多芯片模块(MCM)系统的一部分是新的。设计概念允许在将它们组装到MCM-L衬底之前制造和测试嵌入式无源器件。需要嵌入的被动设备作为当今MCM-L和MCM-D技术的增强。从PCB板和MCMS的表面终止电阻器和去耦电容器的能力,低成本将是MCM技术的突破性的。使用称为互连网发电系统(IMPS)的2层互连系统,将该装置制成了灵活的MCM封装,该系统在阿肯色州大学开发和专利。 IMPS互连拓扑包括细线光刻和批量通过产生,以允许平面功率和地分布,并且仅在两个金属层上致密的信号互连。所使用的材料是用于电阻器的NICR,TAN和CRSI和TA / SUB X / O / SU / SU / BATIO / SUB X /用于电容器的CRSI。用Cu冶金制造触点,互连信号线和电力线。这些装置是在25 / SPL MU / M或50 / SPLMU / M厚的聚酰亚胺膜上制成的,并用相同的聚酰亚胺包封。

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