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In-plane thermoelectric properties characterization of a Si/Ge Superlattice using a microfabricated test structure

机译:使用微型制衡测试结构的Si / Ge超晶格的平面内热电性能

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In this work we present an experimental technique for the characterization of thermoelectric properties of thin films in the in-plane direction. The technique employs a micro-fabricated array of heaters/sensors deposited onto the film in order to monitor the temperature, the Seebeck voltage and the electrical voltage of the thermoelectric film. The thermal diffusivity and thermal conductivity of the film are determined from the decay of the temperature profile detected over a wide frequency range by arrays of temperature sensors around a microscale heater. The temperature profile and the Seebeck voltage monitored by the voltage electrodes are used to determine the Seebeck coefficient of the thermoelectric films in the in-plane direction. The substrate influence on the thermoelectric properties measurements is eliminated by the removal of the substrate over a wide area underneath the heater and the monitoring electrodes. Electrical conductivity measurements are carried out without heating based on the 4-probe method. Test structures are fabricated and thermoelectric properties characterization is carried out for a Si/Ge superlattice.
机译:在这项工作中,我们介绍了一种实验技术,用于在面内方向上表征薄膜的热电性能。该技术采用沉积在薄膜上的微制造的加热器/传感器阵列,以监测温度,塞贝克电压和热电膜的电压。通过在微尺寸加热器周围的温度传感器阵列上通过宽频率范围检测到的温度分布的温度分布的衰减确定膜的热漫射和导热率。由电压电极监测的温度曲线和塞贝克电压用于确定在平面方向上的热电膜的塞贝克系数。通过在加热器和监测电极下方的宽面积上除去基板来消除对热电性能测量的基板对。在不加热的情况下进行电导率测量,基于4探针方法进行加热。测试结构是制造的,并且对Si / Ge超晶格进行热电性能表征。

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