Q-band high isolation GaAs HEMT switches

摘要

In this paper, we present on-wafer measured results of Q-band GaAs HEMT switches. This work benchmarks the state-of-the-art performance of a SPDT switch with 1.6 dB insertion loss and 50 dB isolation at 44 GHz; a SPQT switch with 3 dB insertion loss and 42 dB isolation at 44 GHz. The SPDT switch has isolation of 30-50 dB over a 41-49 GHz bandwidth. The SPQT switch has isolation of 30-48 dB over a 42-47 GHz bandwidth. This is a 20 dB improvement in isolation over reported Q-band FET switches.