Preparation of polycrystalline SiC thin films by RF magnetron sputtering using multi-target

摘要

Silicon carbide thin films were prepared by radio frequency (RF) magnetron sputtering using silicon and carbon targets and were also prepared by DC reactive sputtering. Films were evaluated by X-ray diffraction, X-ray photoelectron spectroscopy and van der Pauw method. The diffraction peaks were observed at 29=35.6[°] for the samples prepared at substrate temperatures from 500 to 750[°C], indicating the growth of SiC (111) The conduction type of SiC thin films was controlled by Al doping.