Comparative study of the topography of submicron opto-electronic device structures using coherence probe microscopy, SEM and AFM

摘要

Non-destructive analysis and measurement control in opto-electronic device fabrication requires new techniques that are fast, accurate and easy to use. In this paper we show how coherence probe microscopy, making use of the short coherence length of white light in an interference reflection microscope, can be used to this end for many applications requiring nanometric axial resolution, sub 0.5 μm lateral resolution and multi micron depth of field in a comparitive study with SEM and AFM.