Schottky diodes made of SI-GaAs have been irradiated with high doses/fluences of photons (mean energy 1 MeV), neutrons (1 MeV), pions (191 MeV) and protons (23 GeV). The detectors have been characterized in terms of macroscopic quantities like I-V characteristic curves and charge collection efficiencies for minimum ionizing as well as α-particles incident on the detector. Whereas no effect is seen after irradiation with photons, considerable degradation occurs after the irradiation with the neutral and charged heavy particles. Si-GaAs material with low carbon content is less affected than material with higher carbon concentration.
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