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机译:快速中子辐照GaAs探测器的辐射损伤研究
Czech Tech Univ, Inst Expt & Appl Phys, CZ-12800 Prague 2, Czech Republic;
Czech Tech Univ, Fac Nucl Sci & Phys Engn, CZ-15119 Prague, Czech Republic;
Acad Sci Czech Republ, Inst Nucl Phys, CZ-25068 Rez, Czech Republic;
Acad Sci Czech Republ, Inst Phys, CZ-16253 Prague 6, Czech Republic;
Czech Tech Univ, Fac Mech Engn, Dept Phys, CZ-16607 Prague 6, Czech Republic;
GaAS detectors; radiation damage; Hecht's equation; GaAs high-field mobility; solid-state detectors; CHARGE-COLLECTION EFFICIENCY; PHASE EPITAXIAL GAAS; PARTICLE DETECTORS; PROTONS; SILICON; PIONS;
机译:由于电子,质子和中子辐射引起的Ingaas光电二极管的位移损伤效应
机译:单晶金刚石探测器在α和中子辐照下快速中子束诊断的时间稳定性
机译:完全抑制MCZ Si探测器在主动伽马辐射过程中对中子辐射损害的反向退火
机译:快速辐照后GaAs中子探测器特性的变化
机译:中子辐照导致碳化硅探测器位移损伤的建模。
机译:AlAsGaAs和GaAs / AlAs超晶格的低能辐射响应及其对电子结构的损伤作用的比较研究
机译:对中子和质子辐照的Gaas粒子的辐射损伤 探测器