Ka-band AlGaAs/InGaAs PHEMT monolithic low-noise amplifier

摘要

The PHEMT MMIC LNA has been developed at Ka-band by using an optimized HEMT MMIC process and MBE /spl delta/-doped AlGaAs/InGaAs wafer. The PHEMT modeling small signal parameters have been successfully used in MMIC CAD and the full-wave EM analysis has been adopted for MMIC layout design. The resulted single- and two-stage MMICs have the performances: NF of 2.9 dB with gain of 4.5 dB at 30.5 GHz (single-stage) and NF of 4.8 dB with gain of 9.5 dB at 34.8 GHz (two-stage).