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LOW-NOISE AMPLIFIER AND AUXILIARY MONOLITHIC INTEGRAL CIRCUIT FOR THIS AMPLIFIER

机译:该放大器的低噪声放大器和辅助完整积分电路

摘要

FIELD: electricity.;SUBSTANCE: low-noise amplifier (LNA) comprises field transistors (FT) (F1, F2, F3, F4), installed with the possibility to process signals received by the amplifier; an input (10) of supply made with the possibility to receive power supply necessary for LNA operation; and an auxiliary monolithic integral circuit (IC). The auxiliary monolithic IC comprises an FT control circuit (2), made with the possibility to monitor drain current in each FT and to control it; an FT selection circuit (3, 24, 22) made with the possibility to determine the level of a permanent component of signal voltage supplied to the input of supply, and to supply the FT selection signal to the FT control circuit (2) in compliance with the determined level of the permanent component.;EFFECT: simplified circuit of field transistors control for low noise amplifiers.;38 cl, 10 dwg
机译:领域:电力。物质:低噪声放大器(LNA)包括场效应晶体管(FT)(F1,F2,F3,F4),可以处理放大器接收的信号;输入电源(10),有可能接收LNA操作所需的电源;辅助单片集成电路(IC)。辅助单片IC包括一个FT控制电路(2),可以监视每个FT中的漏极电流并对其进行控制; FT选择电路(3、24、22),其可以确定提供给电源输入的信号电压的永久分量的电平,并根据要求将FT选择信号提供给FT控制电路(2)效果:确定的低噪声放大器场晶体管简化电路。; 38 cl,10 dwg

著录项

  • 公开/公告号RU2435292C2

    专利类型

  • 公开/公告日2011-11-27

    原文格式PDF

  • 申请/专利权人 ZETEKS SEMIKONDAKTORS PLK;

    申请/专利号RU20080117026

  • 发明设计人 BREHDBERI DEJVID (GB);

    申请日2006-10-30

  • 分类号H03F1/26;H03F1/02;

  • 国家 RU

  • 入库时间 2022-08-21 17:06:22

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