The nonswitching dielectric layer thickness dependence of the channel current in MFIS-FET

摘要

In this letter, we introduce an improved model, which is based on the Miller model, with a thin nonswitching interface layer near the top electrode to describe the channel current of the metal-ferroelectric-insulator field-effect transistor (MFIS-FET). In our model, the thickness ratio U of the nonswitching interface layer varies for different failure mechanisms or external applied electric voltage. Theoretical prediction based on this approach agree well with the recent experiments showed by Tabuchi et al. [Integrated Ferroelectrics 79, 211 (2006)].