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Emitters beyond 2 /spl mu/m based on a strain-compensated type-II Ga/sub 1-x/In/sub x/As/GaAs/sub 1-y/Sb/sub y/ superlattice on InP substrate

机译：基于应变补偿的II-II GA / SUP 1-X / IN / SUB X / AS / GAAS / SUB 1-Y / SB / SUP Y / SUPERTATICE ON INP衬底的发射器超出2 / SPL MU / M超出2 / SPL MU / M超出2 / SPL MU / M.

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We report on LEDs based on strain-compensated GaInAs-GaAsSb superlattice as the active region sandwiched between GaInAsP confinement layers. The top p-contact was formed on a 400 nm Zn-doped InP layer capped by a GaInAs contact layer.

机译：我们在基于应变补偿的GAINA-Gaassb超晶格的LED报告作为夹在BiaPasp限制层之间的有源区。顶部p接触形成在由GAINAS接触层盖上的400nm Zn掺杂的INP层上形成。

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《IEEE Lasers and Electro-Optics Society Annual Meeting》|1998年||共2页
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Peter M.; Fuchs F.; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术;
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1. Impact of strained GaAs spacer between InP emitter and GaAs_(1-y)Sb_y base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs_(1-y)Sb_y/InP DHBTs [J] . Takuya Hoshi, Norihide Kashio, Hiroki Sugiyama, Journal of Crystal Growth . 2014,第juna1期

机译：InP发射极和GaAs_（1-y）Sb_y之间应变的GaAs隔离层对MOCVD生长的InP / GaAs_（1-y）Sb_y / InP DHBTs的结构性能和电学特性的影响
2. High-T/sub 0/ strain-compensated InGaAsSb-AlGaAsSb quantum-well lasers emitting at 2.43 /spl mu/m [J] . Li W., Heroux J.B., Shao H., IEEE Photonics Technology Letters . 2005,第3期

机译：高T / sub 0 /应变补偿的InGaAsSb-AlGaAsSb量子阱激光器，发射功率为2.43 / spl mu / m
3. InP/GaAsSb type-II DHBTs with GaAsSb/lnGaAs superlattice-base and GaAsSb bulk-base structures [J] . Tsai J.-H., Lour W.-S., Guo D.-F., Semiconductors . 2010,第8期

机译：具有GaAsSb / InGaAs超晶格结构和GaAsSb本体结构的InP / GaAsSb II型DHBT
4. Emitters beyond 2 /spl mu/m based on a strain-compensated type-II Ga/sub 1-x/In/sub x/As/GaAs/sub 1-y/Sb/sub y/ superlattice on InP substrate [C] . Peter, M., Fuchs, . 1998

机译：InP衬底上基于应变补偿的II型Ga / sub 1-x / In / sub x / As / GaAs / sub 1-y / Sb / sub y /超晶格的发射极超过2 / spl mu / m
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机译：Gaas（1-x）sb（x）和Gaas（1-x）sb（x）/ Gaas应变层超晶格的光学表征

Emitters beyond 2 /spl mu/m based on a strain-compensated type-II Ga/sub 1-x/In/sub x/As/GaAs/sub 1-y/Sb/sub y/ superlattice on InP substrate

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