UV Single-Photon Absorption Single-Event Transient Testing of Pristine and Irradiated AlGaN/GaN HEMTs

摘要

Carrier injection by single photon absorption using ultraviolet optical pulses is used to investigate single-event transients in pristine and proton-irradiated AlGaN/GaN HEMTs. The resulting transient shape and amplitude depends strongly on the specific location of the injected carriers, and varies with changes in gate and drain bias.