A new chemical amplification negative resist for i-line lithography (XP 2068 F1 from Shipley) is evaluated. First, a process for 0.5 $mu@m features is developed and optimized, using a Tagushi matrix: the compatibility of the resist absorption with the polysilicon and aluminum reflectivities is then tested, and the high thermal stability demonstrated. Second, the process latitude is evaluated in terms of dose-focus latitude, CD linearity, and PEB temperature latitude. Finally, the suitability of the resist for gate fabrication is studied: 0.5 $mu@m features are transferred into polysilicon using two different plasma chemistries.
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机译：评价新的化学放大负抗蚀剂对I线光刻（来自Shipley的XP 2068 F1）。首先，使用Tagushi矩阵开发和优化了0.5 $ MU @ M特性的过程：然后测试抗蚀剂吸收与多晶硅和铝反射率的兼容性，并且展示了高热稳定性。其次，根据剂量聚焦纬度，CD线性度和PEB温度纬度来评估过程纬度。最后，研究了抗蚀剂的抗蚀剂的适用性：0.5 $ Mu @ M特征使用两种不同的等离子体化学传递到多晶硅中。
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