Analysis of second breakdown limits in RBSOA of bipolar transistors

摘要

Performances of different power bipolar transistors during an inductive turn-off transient are experimentally compared, by means of a non-destructive tester, and analysed with the aid of a two-dimensional numerical simulator. Sustaining voltage dependences upon collector current and base drive are found, which can explain its transient evolution. Finally, the influence on device behaviour of base drive and cell geometry is shown, and interpreted in terms of power density distribution.