InGaAs/GaAs/InGaP strained-layer-quantum-well lasers grown by gas-source molecular beam epitaxy

摘要

Aluminum-free In$-0.2$/Ga$-0.8$/As/GaAs/In$-0.49$/Ga$-0.51$/P strained-layer-quantum-well lasers are grown by gas-source molecular beam epitaxy (GSMBE) for the first time. Ridge waveguide lasers of 3 $mu@m width show approximately 1.0 $mu@m lasing wavelength at room temperature under continuous wave (CW) conditions and have low threshold currents (7 mA and 12 mA for 254 $mu@m and 508 $mu@m-long cavity, respectively), high external quantum efficiencies (0.9 mW/mA), and high peak powers (160 mW). High temperature CW operation has been demonstrated up to 185$DGR@C, which is comparable to the best result (200$DGR@C) reported for the InGaAs/GaAs/AlGaAs lasers. Self-align index guided InGaAs/GaAs/InGaP laser are also fabricated using GSMBE in two growth steps. Threshold current of 12 mA with an external differential quantum efficiency of 0.68 mW/mA is obtained from a 2.5 $mu@m $MUL 508 $mu@m self-aligned laser at room temperature under CW operation condition.