Acceptor-related photoluminescence study of GaAs (GaAl)As quantum-well wires

摘要

Acceptor-related photoluminescence spectra are calculated for both homogeneous and on-center spike-doped distribution of acceptors in a cylindrical GaAs-(Ga,Al)As quantum-well wire. Results are dependent on the temperature, on the choice of the quasi-Fermi energy level of the conduction-subband electron gas and on the distribution of acceptors in the wire. The photoluminescence spectra corresponding to a on-center spike- doped Gaussian distribution show a peak for energies associated with on-center impurity states, as it is expected, whereas for a homogeneous distribution of acceptors in the well we essentially found an edge in the spectra associated to transitions involving on-center acceptors and a peaked structure related to the onset of transitions from the conduction subband to on-edge acceptors.