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Pressure dependence of photoluminescence in CdTe/CdMnTe quantum wells

机译:光致发光在CDTE / CDMNTE量子阱中的压力依赖性

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The photoluminescence (PL) of CdTe/CdMnTe quantum wells (QWs) with well widths from 20 to 150 angstroms has been investigated as a function of hydrostatic pressure (0 - 37 kbar) at liquid- helium temperature. No band crossovers were observed before the phase transition at approximately 33 kbar. Pressure coefficients of the E$+$Gamma$/$-1h$/ transitions between the quantized ground levels of the $Gamma conduction band and the heavy-hole valence band are presented for various well widths. The pressure coefficient is found to increase with decreasing well widths, as in InGaAs/GaAs strained quantum wells but unlike that observed in the GaAs/AlGaAs quantum well system.
机译:在液氦温度下,已经研究了具有20至150埃的宽度为20至150埃的CdTe / cdmnnte量子孔(QW)的光致发光(QW)作为液氦温度的静压压力(0-37kbar)。在大约33kbar的相变之前观察到没有带频带。为各种孔宽度提出了伽马传导带和沉重孔格价带之间量化地面之间的+ $伽马$ / $ - $ /转换的压力系数。发现压力系数随着井宽度的降低而增加,如InGaAs / GaAs紧张的量子阱,但与在GaAs / Algaas量子阱系统中观察到的那样。

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