This work presents electromigration reliability and patterns of Sn-3Ag-0.5Cu and Sn-3Ag-1.5Cu/Sn-3Ag-0.5Cu composite flip-chip solder joints with Ti/Ni(V)/Cu under bump metallurgy (UBM), bonded on Au/Ni/Cu substrate pads. The solder joints were subjected to an average current density of 5 kA/cm2 under an ambient temperature of 150掳C. Under the situation when electron charges flow from the UBM towards the substrate, Sn diffuses from the Cu-Ni-Sn intermetallic compound (IMC) developed around the UBM towards the UBM, and eventually causes the Ni(V) layer to deform. Electromigration reliability of Sn-3Ag-1.5Cu/Sn-3Ag-0.5Cu composite flip-chip solder joints was found to be better than that of Sn-3Ag-0.5Cu solder joints. A failure mechanism is proposed according to the Cu weight contents of these two solder joints.
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机译:该工作介绍了SN-3AG-0.5CU和SN-3AG-1.5CU / SN-3AG-0.5CU复合倒装芯片焊点的电迁移可靠性和图案,凸块冶金(UBM)下的Ti / Ni(V)/ Cu(V)/ Cu,在Au / ni / cu衬底垫上粘合。在150℃的环境温度下,将焊点经受5ka / cm 2的平均电流密度。在情况下,当电子电荷从UBM流向底物时,SN从围绕UBM发育的Cu-Ni-Sn金属间化合物(IMC)扩散到UBM,并且最终导致Ni(V)层变形。 SN-3AG-1.5CU / SN-3AG-0.5CU复合倒装芯片焊点的电迁移可靠性被发现优于SN-3AG-0.5CU焊点的焊点。根据这两个焊点的Cu重量含量提出了失效机构。
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