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Laser chip separation method for GaAs MMIC wafers

机译:GaAs MMIC晶片的激光芯片分离方法

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A chip separation process is described that uses a Nd-YAG laser with the wafer mounted on stretchable tape for machine sort and load for GaAs monolithic microwave integrated circuit (MMIC) wafers. This method is considered especially suitable for prototype masks with multiple-chip design. One of the major advantages of this technique is that the laser can be programmed to cut any pattern desired such that the different circuits need not be laid out in a straight grid pattern as required for sawing. One hundred percent (100%) chip separation yield with no chipping or cracking has been demonstrated. The complete laser chip-separation process consists of eight steps: front scribe alley etch, backside lopping, wafer test, wafer mounting, protective coating for optimal die separation, laser cutting, protective coat removal, and stretch and frame for sorting and chip loading. The process steps are described, and the method's advantages are noted.
机译:描述了一种芯片分离过程,其使用ND-YAG激光器,所述ND-YAG激光器安装在可伸展的带上的晶片,用于GAAS单片微波集成电路(MMIC)晶片的机器排序和负载。该方法被认为特别适用于具有多芯片设计的原型掩模。该技术的主要优点之一是激光可以被编程为切割所需的任何模式,使得不同电路不需要根据锯切所需的直线图案布置。已经证明了百分之百(100%)芯片分离产量,没有碎裂或破裂。完整的激光芯片分离过程由八个步骤组成:Front Scribe Alley蚀刻,背面跳起,晶片试验,晶片安装,用于最佳模具分离的保护涂层,激光切割,保护涂层去除和伸展和框架用于分选和芯片加载。描述了处理步骤,并注意到该方法的优点。

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