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Laser chip separation method for GaAs MMIC wafers

机译:GaAs MMIC晶片的激光芯片分离方法

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摘要

A chip separation process is described that uses a Nd-YAG laser with the wafer mounted on stretchable tape for machine sort and load for GaAs monolithic microwave integrated circuit (MMIC) wafers. This method is considered especially suitable for prototype masks with multiple-chip design. One of the major advantages of this technique is that the laser can be programmed to cut any pattern desired such that the different circuits need not be laid out in a straight grid pattern as required for sawing. One hundred percent (100%) chip separation yield with no chipping or cracking has been demonstrated. The complete laser chip-separation process consists of eight steps: front scribe alley etch, backside lopping, wafer test, wafer mounting, protective coating for optimal die separation, laser cutting, protective coat removal, and stretch and frame for sorting and chip loading. The process steps are described, and the method's advantages are noted.
机译:描述了一种芯片分离工艺,该工艺使用Nd-YAG激光器,将晶片安装在可拉伸的胶带上,以便对GaAs单片微波集成电路(MMIC)晶片进行机器分类和装载。该方法被认为特别适用于具有多芯片设计的原型掩模。该技术的主要优点之一是可以对激光器进行编程,以切割出所需的任何图案,从而无需像锯切所需要的那样以笔直的网格图案布置不同的电路。已经证明了没有碎裂或破裂的百分之一百(100%)的碎屑分离率。完整的激光切屑分离过程包括八个步骤:正面划线胡同蚀刻,背面倾斜,晶圆测试,晶圆安装,用于最佳管芯分离的保护涂层,激光切割,去除保护层以及用于分类和切屑装载的拉伸和框架。描述了处理步骤,并指出了该方法的优点。

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