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FABRICATION OF ELECTROSTATICALLY ACTUATED SILICON NITRIDE MICROSHUTTER ARRAYS

机译:静电型氮化硅微恒阵列的制造

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We have developed a new back side fabrication process to actuate microshutter arrays (MSA) electrostatically at the NASA Goddard Space Flight Center. The microshutters are fabricated on silicon with thin silicon nitride membranes. The microshutters rotate 90° on torsion bars. The selected microshutters are actuated, held, and addressed electrostatically by applying voltages on the electrodes the front and back sides of the microshutters. The atomic layer deposition (ALD) of aluminum oxide (Al_2O_3) was used to insulate electrodes on the back side of walls; the insulation can withstand over 100 V. The ALD aluminum oxide is dry etched, and then the microshutters are released in vapor HF. A monolayer of perfluorodecyltrichlorosilane (FDTS) was deposited to prevent stiction.
机译:我们开发了一种新的背面制造过程,在美国宇航局戈达德太空飞行中心静电致力于静电阵列(MSA)。微型乳膏在具有薄氮化硅膜的硅上制造。 Microshutters在扭杆上旋转90°。通过在微垫片的前侧和后侧施加电压施加电压来静电地致动,保持和寻址所选择的微垫片。氧化铝(AL_2O_3)的原子层沉积(ALD)用于绝缘壁背面的电极;绝缘材料可以承受超过100V。铝氧化铝是干蚀刻的,然后在蒸汽HF中释放微乳糖液。沉积全氟二癸基三氯硅烷(FDT)的单层以防止静态。

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