For future semiconductor (SC) spintronic applications with low power consumption, vertically stacked CoFe/Ge//Fe_3Si trilayer structures on a Si platform have been explored [1]. Recently, we observed clear magnetoresistance (MR) effect related to spin-dependent transport through p-type Ge layer in the CoFe/Ge/Fe_3Si vertical spin-valve devices [2]. However, the MR ratio at room temperature was less than 0.1%. Here, we utilize one of the Heusler alloys, Co_2FeSi, with high spin polarization of 0.5-0.8 [3] as an electrode in the vertical device structure.
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机译：对于具有低功耗的未来半导体（SC）旋转式应用，SI平台上的垂直堆叠CoFe / GE // FE_3SI三层结构已被探讨[1]。最近，我们观察到通过COFE / GE / FE_3SI垂直旋转阀装置的P型GE层的透明磁阻（MR）效应与旋转依赖性运输有关的旋转依赖性转运[2]。但是，室温下的MR比小于0.1％。在这里，我们利用HEUSLER合金，CO_2FESI中的一种，具有0.5-0.8 [3]的高自旋极化作为垂直器件结构中的电极。
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