Room-temperature magnetoresistance in organic spin-valves based on a Co_2MnSi Heusler alloy

摘要

We report room-temperature magnetoresistance in sandwich structures consisting of Co_2_ MnSi/organic spacer/Co. We have prepared the epitaxial films of a Heusler alloy Co_2MnSi on MgO (001) by pulsed laser deposition, followed by thermal depositions of organic and Co layers. The spin-valve with an organic layer of N,N-bis (3-methylphenyl)-N,N-diph-enylbenzidine exhibited a positive magnetoresistance ratio of up to 7.8%, which was the highest value among organic spin-valves at room temperature.