Semiconductor device such as vertical mold field effect transistor, has source diffusion layer formed on upper portion of base diffusion layer provided on both sides of gate polysilicon layer

摘要

Gate insulation oxide film (5) is formed on trench groove (4) on base diffusion layer (3) on epitaxial layer (2) laminated on substrate (1). Gate polysilicon layer (6) is formed on gate insulation oxide film, so that upper portion of gate polysilicon layer is projected on base diffusion layer (3). Source diffusion layer (7) is formed on base diffusion layer on both sides of gate polysilicon layer. An Independent claim is also included for manufacturing method of semiconductor device.