A 28 GHz >30 dBm Output P1dB SPDT switch with integrated ESD protection in CMOS 65 nm

摘要

A 28 GHz watt-level CMOS SPDT switch with integrated electro-static discharge protection is designed and fabricated in a 65 nm CMOS process for a fifth-generation mobile communication. The measured insertion losses of the SPDT are 2.2 dB and 2.6 dB for transmit and receive modes, respectively. The fabricated SPDT switch shows output P1dB of >30 dBm for transmit mode and input P1dB of 4.3 dBm for receive mode.