A 28GHz Power Amplifier with Analog Predistortion Linearizer in 65nm CMOS

摘要

This paper proposes that a radio frequency power amplifier is suitable for a 5G millimeter wave.It adopts a three-stage single-ended structure at 28GHz.An analog predistortion lmearization method is used to improve the linearity of the power amplifier(PA).As a result,there is a significant improvement in power-added efficiency(PAE)and linearity is achieved.The Ka-band PA is implemented in TSMC 65nm CMOS process.At 1.2V supply voltage,the PA proposed in this paper achieves a saturated output power of 15.9dBm and a PAE of 16%.After linearization,the output power at the ldB compression point is increased by 2dBm,with efficient gain compensation performance.