Substantial advantages of fully-depleted CMOS/SIMOX devices aslow-power high-performance VLSI components compared with its bulk-CMOScounterpart

摘要

The properties of fully-depleted CMOS/SIMOX devices as low-powerhigh-performance VLSI components are presented. When compared with bulkdevices the steeper subthreshold slope of the SIMOX device allows one toenhance the performance of multipliers and SRAMs at low supply voltageswithout increasing the leakage current. The controllability of thethreshold voltage statistical spreading and the standby leakage currentof SIMOX LSI is also demonstrated