Thermal impact and process diagnosis of copper chemical mechanicalpolish

摘要

To effectively improve and control copper polish performance, athermal impact study and a process diagnosis methodology were exploredand proposed in this paper for 0.18 μm technology and beyond. Microand macro thermal impacts on polishing of copper damascene wafers withtrench structures were investigated by studying basic chemical kineticsof some mature copper slurries. Infrared thermal camera techniques wereemployed to in-situ monitor the macro thermal impact responses of thepolish pad. Based on these responses, a process diagnosis algorithm wasdeduced for diagnosis of copper polish nonuniformity at the end of eachpolish. Several experiments have demonstrated the usefulness of thesemethodologies