A process for the preparation of a dielectric surface layer for a copper metallization, by the use of a thermally - chemical treatment on the basis of

摘要

The method comprising the steps of:Forming a copper-based metal area in a dielectric layer of a metallization layer of a semiconductor component, wherein the copper based metal area has an exposed surface;Cleaning of the exposed surface by means of a thermally - chemical treatment in the absence of a plasma, the material in a water retention ends is carried out further evolution of gas environment;Modifying the cleaned surface by a thermal treatment with the introduction of a material comprising silicon precursors in the absence of a plasma; andDepositing a dielectric covering layer on the modified surface in a being.