A process for the preparation of a dielectric surface layer for a copper metallization, by the use of a thermally - chemical treatment on the basis of

摘要

It has been a new art discloses, in which a barriers - / surface layer for a copper based metal line is prepared by a thermally - chemical treatment on the basis of hydrogen with a surface modification on the basis of a silicon precursors containing material is used, which is an in situ plasma-enhanced deposition of silicon based is adjoined by a dielectric barrier material. The thermally - chemical cleaning process is carried out in the absence of a being.