Defect generation in ultra-thin oxide over large fluence range

摘要

The defect generation rate (P_g) during constant voltage stress is investigated by using short-time voltage pulses over large fluence range. It is found that P_g is not constant as a function of injected charge and the voltage acceleration of P_g in the linear defect generation regime is similar to that of the reciprocal of Q_BD. The change of carrier capture cross (σ) during defect generation was speculated as one of the reasons responsible for the change of the P_g value with injected charge. However, from this preliminary report, we have determined that the change of P_g can not be explained by a change of σ.