Successful utilization of CH₄/H₂ RIE for thefabrication of 1.3 μm InGaAsP/InP integrated laser with butt-coupledpassive waveguides

摘要

We obtained uniform and high performance for 1.3 μm InGaAsP/InPburied heterostructure (BH) integrated laser with butt-coupledwaveguides using reactive ion etching (RTE) for mesa definition andlow-pressure metalorganic vapor phase epitaxy (LP-MOVPE) for waveguideand blocking layer regrowth. Measured average coupling efficiencybetween active layer and passive waveguide layer was over 91% per facetacross a quarter of 2-inch InP wafer. The average threshold current andslope efficiency were 13 mA and 0.26 mW/mA of the 700 μm longintegrated laser, respectively. These uniform and high performance wasattributed to the uniform etching characteristics of RIE and a slightchemical etching using HBr-based solution for relief of RIE damage