Integrated complementary HBT microwave push-pull and Darlingtonamplifiers with PNP active loads

摘要

The authors report the first microwave results on complementaryheterojunction bipolar transistor (HBT) amplifiers which integrate bothNPN and PNP devices on the same chip using selective molecular beamepitaxy. An HBT wideband amplifier utilizing the Darlingtonconfiguration and implementing a PNP active load has a gain of 7.5 dBand a bandwidth from DC to 2.5 GHz. A complementary push-pull amplifierhas a saturated output power of 7.5 dBm at 2.5 GHz