Integrated complementary HBT microwave push-pull and Darlington amplifiers with PNP active loads

摘要

The authors report the first microwave results on complementary heterojunction bipolar transistor (HBT) amplifiers which integrate both NPN and PNP devices on the same chip using selective molecular beam epitaxy. An HBT wideband amplifier utilizing the Darlington configuration and implementing a PNP active load has a gain of 7.5 dB and a bandwidth from DC to 2.5 GHz. A complementary push-pull amplifier has a saturated output power of 7.5 dBm at 2.5 GHz.