A fully integrated monolithic D-band oscillator-doublerchain using InP-based HEMTs

摘要

The experimental characteristics of a monolithic D-bandoscillator-doubler chain are reported, together with the design,monolithic integrated circuit (MMIC) implementation, and testing. Thecircuits were fabricated using submicron (0.1-μm) InAlAs/InGaAshigh-electron-mobility transistors (HEMTs) and had on-chip biasstabilization circuitry and an integrated E-field probe for directradiation into the waveguide. The oscillation signal was detected over afrequency range of 130.5 GHz to 132.8 GHz with an output power of -12dBm for designs with small-gate-periphery (45-μm) HEMTs