Metamorphic HFETs on GaAs with InP-subchannels for deviceperformance improvements

摘要

This paper reports on 43%-In metamorphic HFETs on GaAs with anInP-subchannel. To our knowledge, this is the first time thatInP-subchannels have been used in metamorphic HFETs. The used gatelength is 150 nm. The composite-channel of the devices was designed toovercome the high impact ionization rate in InGaAs while maintaining thevery high mobility for a low turnon resistance. The devices showexcellent RF-performance: f_max=300 GHz and f_t=188GHz. DC-performance: I_DS,max=625 mA/mm with transconductanceg_max=850 ms/mm