High-gain GaInP/GaAs HBT monolithic transimpedance amplifier forhigh-speed optoelectronic receivers

摘要

A self-aligned GaInP/GaAs HBT technology was used to develop amonolithic high-gain transimpedance amplifier suitable for opticalcommunication receivers. On-wafer probe measurements revealed a gain (S₂₁) of 18.8 dB with a bandwidth of 13.5 GHz and input/outputmatching better than -8 dB. The amplifier showed a sensitivity of -15dBm for 10 Gb/s NRZ 27-1 pseudo-random bit sequence with aBER of 10-9 The noise figure of the amplifier was better than7.5 dB over the bandwidth of operation