A Monolithic GaAs I.F. Amplifier for Integrated Receiver Applications

摘要

A monolithic GaAs integrated amplifier was constructed for the 500 to 1000 MHz intermediate frequency band. The amplifier provides 8.0 + or - 1.5 dB gain across the band. The output of the amplifier utilizes a source follower configuration to obtain a favorably low output VSWR of less than 1.5:1 (return loss >15 dB). All bias lines with integral bypass capacitors are contained on the chip and this amplifier is suitable for further integration as a building block of a monolithically integrated receiver front end.