Direct detecting of dynamic floating-body effects in SOI circuitsby backside electron beam testing

摘要

It is demonstrated that the dynamic floating-body effects in SOIcircuits can be detected directly by backside electron beam (EB)testing. Using the present technique, we have determined the actual bodypotential waveform during dynamic operation and confirmed that 0.35μmfield-shield SOI CMOS devices provide stable-operation while keepingsuch merits of SOI as quicker switching