A continuous and general model for boron diffusion duringpost-implant annealing including damaged and amorphizing conditions

摘要

A model has been developed for boron diffusion after ionimplantation and validated for a very wide range of doses andtemperatures. For the first time, it allows the continuous simulation ofthe transition between amorphizing and non-amorphizing conditions.Transient-enhanced diffusion (TED) and activation are modeled by takinginto account the implant damage and precipitation kinetics. It is shownthat the initial level of activation is one of the most importantparameters in such an analysis