A new approach to implement 0.1 μm MOSFET on thin-film SOIsubstrate with self-aligned source-body contact

摘要

An alternative approach was used to optimize SOI MOSFET forsubquarter micron channel length. It involves a direct transfer of theoptimized bulk Si structure to SOI substrate with film thickness of⩾100 nm. Since the device is operating in non-fully depleted mode,floating body effect has to be eliminated. This is accomplished througha novel self-aligned asymmetric source-body contact in which the currentconducts through tunneling. Test structures have been fabricated andgood electrical results were obtained