New contact process using soft etch for stable ohmiccharacteristics and its application to 0.1 micron CMOS devices

摘要

A new contact process using Inductive Coupled Plasma (ICP) softetch with Ar as an in-situ pretreatment before metallization wasdeveloped. The ICP soft etch can control metal and silicon interfaceconditions to form a stable ohmic contact. Evaluating ohmiccharacteristics, junction leakage, reliability of thin gate oxide anddriving ability characteristics, this study shows that the ICP soft etchprocess is an effective pre-metallization treatment for contactformation in CMOS process. The mechanism to form the stable ohmiccontact was theoretically analyzed by Monte-Carlo topological simulation