A new cathode for vacuum microelectronic devices: silicon tipavalanche cathode

摘要

A new cathode for the vacuum microelectronic devices-Silicon TipAvalanche Cathode (STAC) has been developed. A STAC is a silicon fieldemitter with a shallow n+-p+ junction formed onthe tip. It has been demonstrated that the extraction voltage requiredto produce 0.1 μA per tip is reduced from 97 V to 72 V as the reversebias applied to the n+-p+ junction is increasedfrom 0 V to 35 V. Also a new model based on the field emission from thesurface states is proposed and used to explain the emission currentenhancement of STAC