A relaxation time approach to model the non-quasi-static transienteffects in MOSFETs

摘要

A relaxation time approach is used to model the non quasi-staticeffect of MOS circuits in transient analysis. Unlike the existingquasi-static models, the new model takes care of the finite chargingtime of the channel to reach equilibrium instantaneous channel chargere-distribution, and velocity saturation, giving more realistic andaccurate results. The model has been implemented in SPICE and thesimulation time penalty is less than 50%