Temperature dependence of collector breakdown voltage and outputconductance in HBT's with AlGaAs, GaAs, InP, and InGaAs collectors

摘要

The common-emitter I-V characteristics weremeasured over the temperature range of 25-125° C for HBTs(heterojunction bipolar transistors) with different semiconductorband-gap collectors. For In_0.53Ga_0.47Ascollectors, the low band-gap (0.75 eV at 25° C) results in highleakage currents and low collector breakdown voltages which actuallydecrease with increasing temperature. In contrast, wide band-gap GaAsand AlGaAs collectors exhibit low leakage currents and high collectorvoltages which increase with increasing temperature. It is demonstratedthat the use of an In_0.53Ga_0.47As/InPheterojunction collector results in near ideal I-Vcharacteristics with high collector breakdown voltages (>10 V from25-125° C)