A DC to 20 GHz high gain monolithic InP/InGaAs HBT feedbackamplifier

摘要

The authors have realized a high-gain, broadband, bipolar feedbackamplifier exhibiting an average flatband gain of 30 dB with6.5-dB_p-p ripple and a -3-dB bandwidth of 20 GHz. UsingInP/InGaAs heterostructure bipolar transistors (HBTs), a gain-bandwidthproduct of more than 600 GHz was demonstrated for a nondistributedmonolithic integrated circuit for the first time. This two-stagetransadmittance-transimpedance design has a chip-size of 975μm×675 μm and dissipates 280 mW for a 3-V supply. The inputreturn loss and reverse transmission to 9 GHz were -30 dB and -40 dB,respectively