New n-well fabrication techniques based on 2D process simulation

摘要

For submicron device technology, 2D process modeling is essential. The need for shallow junctions and control of lateral dimensions of well and oxide isolation regions require well-characterized processes. This paper presents results obtained with SUPREM-IV which show fully numerical 2D coupled diffusion for both point defects and dopant atoms. Based on comparison of experimental results and parameter extraction for surface kinetic coefficients of point defects, SUPREM-IV is used to design a new n-well process with 37% reduction of the lateral well dimension. For dopant diffusion, the role of coupled point defects (interstitials and vacancies) and dopants are shown to give a unique result based on extracted surface recombination rates (1) and experimental data.