New technique of doped oxide diffusion and its application to integrated circuit devices

摘要

A new technique of doped oxide diffusion is developed and investigated. In the present method, the doped oxide is deposited in an evacuated system from organic compound sources. We applied this method to every diffusion process in the fabrication of bipolar IC. The reproducibility of the "unsaturated diffusion" is much improved and less defect generation as compared with the conventional methods is confirmed, Its extensive applicability has standardized the diffusion process in which various kinds of techniques have been used.